Understanding Silicon Surface Chemical CIeaning/Passivation Using Aqueous HF Solutions : Beam Induced Physics and Chemistry

• Material Type: 記事
• Title: Understanding Silicon Surface Chemical CIeaning/Passivation Using Aqueous HF Solutions : Beam Induced Physics and Chemistry
• Author/Editor: HIGASHI,G.S.
• Publication, Distribution, etc.: 日本 : Japanese Journal of Applied Physics
• Publication Date: 1992-04-30
• Publication Date (W3CDTF): 1992-04-30
• Periodical title: JJAP series
• No. or year of volume/issue: 5
• Volume: 5
• Pages: 255-259
• Text Language Code: ENG
• Subject Heading: HF acid etching; reaction mechanisms; infrared spectroscopy; surface chemistry; scanning tunneling microscopy; hydrogen terminated silicon; surface morphology
• Note (General): 著者所属: AT&T Bell Laboratories
• Persistent ID (NDL): info:ndljp/pid/10472596; https://dl.ndl.go.jp/pid/10472596
• Collection: 障害者向け資料
• Collection (Materials For Handicapped People:1): テキストデータ
• Collection (particular): 国立国会図書館デジタルコレクション > 電子書籍・電子雑誌 > 学術機関 > 学協会; https://dl.ndl.go.jp/collections/B00043
• Acquisition Basis: NII-ELS
• Available (W3CDTF): 2017-08-23
• Date Accepted (W3CDTF): 2017-08-15
• Date Captured (W3CDTF): 2017-08-15
• Format (IMT): application/pdf
• Access Restrictions: インターネット公開
• Availability of remote photoduplication service: 不可
• Periodical Title (Persistent ID (NDL)): info:ndljp/pid/10389312; https://dl.ndl.go.jp/pid/10389312
• Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション; https://dl.ndl.go.jp

• Summary, etc.: Dissolution of Si surface oxides in HF acid lead to Si surfaces which are atomically clean and terminated passivity with hydrogen. Hydrogen terminates...