ラジカル窒化処理で形成したSiON/SiC構造の窒素の深さ方向分布の角度分解X線光電子分光法による解明
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DOI[10.18957/rr.6.1.13]to the data of the same series
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- Material Type
- 記事
- Author/Editor
- 野平博司岡田葉月高嶋明人
- Publication, Distribution, etc.
- Publication Date
- 2018-01-25
- Publication Date (W3CDTF)
- 2018-01-25
- Alternative Title
- The AR-XPS study on depth profile of N atom in oxynitride film formed on 4H-SiC by radical nitridation
- Periodical title
- SPring-8/SACLA利用研究成果集
- No. or year of volume/issue
- 6(1)
- Volume
- 6(1)