博士論文

Interface control of Al2O3-based insulated-gate structures for high-frequency GaN HEMTs

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Interface control of Al2O3-based insulated-gate structures for high-frequency GaN HEMTs

Persistent ID (NDL)
info:ndljp/pid/11288077
Material type
博士論文
Author
Ozaki, Shiro
Publisher
Hokkaido University
Publication date
2019-03-25
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
北海道大学,博士(工学)
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Notes on use at the National Diet Library

Notes on use

Note (General):

(主査) 教授 本久 順一, 教授 葛西 誠也, 准教授 佐藤 威友情報科学研究科(情報エレクトロニクス専攻)

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  • Hokkaido University Collection of Scholarly and Academic Papers

    Digital
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Digital

Material Type
博士論文
Author/Editor
Ozaki, Shiro
Author Heading
Publication, Distribution, etc.
Publication Date
2019-03-25
Publication Date (W3CDTF)
2019-03-25
Alternative Title
Al2O3絶縁ゲート構造の界面制御と高周波GaN HEMTへの応用
Contributor
本久, 順一
葛西, 誠也
佐藤, 威友
Degree grantor/type
北海道大学