博士論文
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Monitoring Function for Gate Oxide Degradation to Improve Reliability of SiC MOSFETs Implemented in Power Conversion Circuits

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Monitoring Function for Gate Oxide Degradation to Improve Reliability of SiC MOSFETs Implemented in Power Conversion Circuits

Persistent ID (NDL)
info:ndljp/pid/12361020
Material type
博士論文
Author
林, 真一郎
Publisher
-
Publication date
2022-03-25
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
東京都立大学,博士(工学)
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開始ページ : 1終了ページ : 138

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Digital

Material Type
博士論文
Author/Editor
林, 真一郎
Author Heading
Publication Date
2022-03-25
Publication Date (W3CDTF)
2022-03-25
Alternative Title
電力変換回路に実装されたSiC MOSFETの信頼性向上を目的としたゲート酸化膜劣化監視機能
Degree grantor/type
東京都立大学
Date Granted
2022-03-25
Date Granted (W3CDTF)
2022-03-25