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電子書籍・電子雑誌R&D review of Toyota CRDL
Volume number42 (2)
A vertical...

A vertical insulated gate AlGaN/GaN heterojunction field-effect transistor

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A vertical insulated gate AlGaN/GaN heterojunction field-effect transistor

Persistent ID (NDL)
info:ndljp/pid/3382984
Material type
記事
Author
Masakazu Kanechikaほか
Publisher
豊田中央研究所
Publication date
2011-06
Material Format
Digital
Journal name
R&D review of Toyota CRDL 42(2)
Publication Page
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Digital

Material Type
記事
Author/Editor
Masakazu Kanechika
Masahiro Sugimoto
Narumasa Soejima
Publication, Distribution, etc.
Publication Date
2011-06
Publication Date (W3CDTF)
2011-06
Extent
容量 : 422_001kanechika.pdf(687147bytes)
Alternative Title
縦型GaNデバイスの開発
Periodical title
R&D review of Toyota CRDL
No. or year of volume/issue
42(2)