A vertical insulated gate AlGaN/GaN heterojunction field-effect transistor
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- Material Type
- 記事
- Author/Editor
- Masakazu KanechikaMasahiro SugimotoNarumasa Soejima
- Publication, Distribution, etc.
- Publication Date
- 2011-06
- Publication Date (W3CDTF)
- 2011-06
- Extent
- 容量 : 422_001kanechika.pdf(687147bytes)
- Alternative Title
- 縦型GaNデバイスの開発
- Periodical title
- R&D review of Toyota CRDL
- No. or year of volume/issue
- 42(2)