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電子書籍・電子雑誌豊田中央研究所R&Dレビュー
Volume number39 (4)
Proposal o...

Proposal of a new high power Insulated Gate BipolarTtransistor

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Proposal of a new high power Insulated Gate BipolarTtransistor

Persistent ID (NDL)
info:ndljp/pid/3494630
Material type
記事
Author
Sachiko Kawajiほか
Publisher
豊田中央研究所
Publication date
2004-12
Material Format
Digital
Journal name
豊田中央研究所R&Dレビュー 39(4)
Publication Page
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Digital

Material Type
記事
Author/Editor
Sachiko Kawaji
Masayasu Ishiko
Katsuhiko Nishiwaki
Toyokazu Ohnishi
Publication, Distribution, etc.
Publication Date
2004-12
Publication Date (W3CDTF)
2004-12
Extent
容量 : 394_007kawaji.pdf(134739bytes)
Alternative Title
新しい高出力IGBTの提案
Periodical title
豊田中央研究所R&Dレビュー
No. or year of volume/issue
39(4)