Proposal of a new high power Insulated Gate BipolarTtransistor
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- Material Type
- 記事
- Author/Editor
- Sachiko KawajiMasayasu IshikoKatsuhiko NishiwakiToyokazu Ohnishi
- Publication, Distribution, etc.
- Publication Date
- 2004-12
- Publication Date (W3CDTF)
- 2004-12
- Extent
- 容量 : 394_007kawaji.pdf(134739bytes)
- Alternative Title
- 新しい高出力IGBTの提案
- Periodical title
- 豊田中央研究所R&Dレビュー
- No. or year of volume/issue
- 39(4)