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電子書籍・電子雑誌豊田中央研究所R&Dレビュー
Volume number39 (4)
Proposal o...

Proposal of a new high power Insulated Gate BipolarTtransistor

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Proposal of a new high power Insulated Gate BipolarTtransistor

Persistent ID (NDL)
info:ndljp/pid/3494630
Material type
記事
Author
Sachiko Kawajiほか
Publisher
豊田中央研究所
Publication date
2004-12
Material Format
Digital
Journal name
豊田中央研究所R&Dレビュー 39(4)
Publication Page
-
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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Sachiko Kawaji
Masayasu Ishiko
Katsuhiko Nishiwaki
Toyokazu Ohnishi
Publication, Distribution, etc.
Publication Date
2004-12
Publication Date (W3CDTF)
2004-12
Extent
容量 : 394_007kawaji.pdf(134739bytes)
Alternative Title
新しい高出力IGBTの提案
Periodical title
豊田中央研究所R&Dレビュー
No. or year of volume/issue
39(4)
Volume
39(4)
ISSN (Periodical Title)
1347-9652
ISSN-L (Periodical Title)
0385-1508
Text Language Code
eng
Persistent ID (NDL)
info:ndljp/pid/3494630
Collection (Materials For Handicapped People:1)
Collection (particular)
国立国会図書館デジタルコレクション > 電子書籍・電子雑誌 > その他
Acquisition Basis
インターネット資料収集保存事業(WARP)
Date Accepted (W3CDTF)
2012-05-29T00:48:13+09:00
Date Captured (W3CDTF)
2007-08-20
Format (IMT)
application/pdf
Access Restrictions
国立国会図書館内限定公開
Service for the Digitized Contents Transmission Service
図書館・個人送信対象外
Availability of remote photoduplication service
不可
Periodical Title (Persistent ID (NDL))
info:ndljp/pid/3494626
Data Provider (Database)
国立国会図書館 : 国立国会図書館デジタルコレクション