次世代Siデバイス向けPECVD低誘電率層間絶縁膜用プレカーサーの開発
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- Material Type
- 記事
- Author/Editor
- 田島暢夫神力学宮澤和浩
- Publication, Distribution, etc.
- Publication Date
- 2005-12-02
- Publication Date (W3CDTF)
- 2005-12-02
- Extent
- 容量 : 04.pdf(763807bytes)
- Alternative Title
- Development of new PECVD precursors for low-k films with high mechanical strength for next generation silicon devices
- Periodical title
- 大陽日酸技報
- No. or year of volume/issue
- (24)