前川, 透, 杉木, 喜洋, 松本, 聡, Maekawa, Toru, Sugiki, Yoshihiro, Matsumoto, Satoshi宇宙開発事業団2002-12-27宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystalsp.19-28
前川, 透, 福田, 尚宏, 松本, 聡, 足立, 聡, 依田, 真一, 木下, 恭一, Maekawa, Toru, Fukuda, Takahiro, Matsumoto, Satoshi, Adachi, Satoshi, Yoda, Shinichi, Kinoshita, Kyoichi宇宙開発事業団2003-08-29宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.27-37
前川, 透, 池上, 圭介, 田所, 丈季, 杉木, 喜洋, 松本, 聡, Maekawa, Toru, Ikegami, Keisuke, Tadokoro, Tomoki, Sugiki, Yoshihiro, Matsumoto, Satoshi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.41-49