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Vacancy supersaturations produced by high-energy ion implantation ORNLCP96088 DE98 004112 CONF980528

Vacancy supersaturations produced by high-energy ion implantation ORNLCP96088 DE98 004112 CONF980528
Microform規格・テクニカルリポート類
Venezia, V. C, Eaglesham, D. J, Jacobson, D. C, Gossmann, H. J, Haynes, T. E1998<LS-DE98/004112>
National Diet Library

New approach to the fabrication of 'smart' near-surface nanostructure composites ORNLCP96051 DE97 009372

New approach to the fabrication of 'smart' near-surface nanostructure composites ORNLCP96051 DE97 009372
Microform規格・テクニカルリポート類
Gea, L, Honda, S, Boatner, L. A, Haynes, T. E, Sales, B. C1998<LS-DE97/009372>
National Diet Library

Role of implantation damage in the production of silicon-on- insulator films by co-Implantation of He(sup +) and H(sup +) ORNLCP96086 DE98 004113 CONF980528

Role of implantation damage in the production of silicon-on- insulator films by co-Implantation of He(sup +) and H(sup +) ORNLCP96086 DE98 004113 CONF980528
Microform規格・テクニカルリポート類
Venezia, V. C, Agarwal, A, Haynes, T. E, Holland, O. W, Eaglesham, D. J1998<LS-DE98/004113>
National Diet Library

Enhanced diffusion of dopants in vacancy supersaturation produced by MeV implantation CONF-970302-6 DE97 006058

Enhanced diffusion of dopants in vacancy supersaturation produced by MeV implantation CONF-970302-6 DE97 006058
PaperMicroform規格・テクニカルリポート類
Venezia, V. C, Haynes, T. E, Agarwal, A, Gossmann, H. J, Eaglesham, D. J1997<LS-DE97/006058>
National Diet LibraryOther Libraries in Japan

Deposition of hetero-epitaxial In(sub 2)O(sub 3) thin films by molecular beam epitaxy CONF-9605188-2 DE96 012082

Deposition of hetero-epitaxial In(sub 2)O(sub 3) thin films by molecular beam epitaxy CONF-9605188-2 DE96 012082
PaperMicroform規格・テクニカルリポート類
Taga, N, Maekawa, M, Shigesato, Y, Yasui, I, Haynes, T. E1996<LS-DE96/012082>
National Diet LibraryOther Libraries in Japan

Effects of rapid recrystallization and ion implanted carbon on the solid phase epitaxial regrowth of Si(sub 1-x)Ge(sub x) alloy layers on silicon CONF-950412-24 DE95 014581

Effects of rapid recrystallization and ion implanted carbon on the solid phase epitaxial regrowth of Si(sub 1-x)Ge(sub x) alloy layers on silicon CONF-950412-24 DE95 014581
Microform規格・テクニカルリポート類
Antonell, M. J, Jones, K. S, Haynes, T. E1995<LS-DE95/014581>
National Diet Library

Raman study of damage processes in Si(sup +)-implanted GaAs CONF-940903-1 DE95 005898

Raman study of damage processes in Si(sup +)-implanted GaAs CONF-940903-1 DE95 005898
PaperMicroform規格・テクニカルリポート類
Ivanda, M, Desnica, U. V, Haynes, T. E, Hartmann, I, Kiefer, W1994<LS-DE95/005898>
National Diet LibraryOther Libraries in Japan

Raman study of ''boson peak'' in ion-implanted GaAs: Dependence on ion dose and dose rate CONF-9307124-5 DE96 010638

Raman study of ''boson peak'' in ion-implanted GaAs: Dependence on ion dose and dose rate CONF-9307124-5 DE96 010638
PaperMicroform規格・テクニカルリポート類
Ivanda, M, Desnica, U. V, Haynes, T. E1993<LS-DE96/010638>
National Diet LibraryOther Libraries in Japan

Defects and diffusion in Si(sup +) implanted GaAs CONF-930405-57 DE94 018711

Defects and diffusion in Si(sup +) implanted GaAs CONF-930405-57 DE94 018711
PaperMicroform規格・テクニカルリポート類
Jones, K. S, Robinson, H. G, Haynes, T. E, Deal, M. D, Lee, C. C1993<LS-DE94/018711>
National Diet LibraryOther Libraries in Japan

LATTICE DAMAGE DURING ION IMPLANTATION OF SEMICONDUCTORS. (CONF ; CONF-9308122-6)

LATTICE DAMAGE DURING ION IMPLANTATION OF SEMICONDUCTORS. (CONF ; CONF-9308122-6)
Paper図書
HAYNES, T.E. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))1993.
Other Libraries in Japan
  • Author HeadingHAYNES, T.E.

LATTICE DAMAGE IN ION-IMPLANTED COMPOUND SEMICONDUCTORS AND ITS EFFECT ON ELECTRICAL ACTIVATION (CONF ; CONF-930405-1)

LATTICE DAMAGE IN ION-IMPLANTED COMPOUND SEMICONDUCTORS AND ITS EFFECT ON ELECTRICAL ACTIVATION (CONF ; CONF-930405-1)
Paper図書
HAYNES, T.E.// MORTON, R.// LAU, S.S. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))1993.
Other Libraries in Japan
  • Author HeadingHAYNES, T.E. MORTON, R. LAU, S.S.

LATTICE DAMAGE IN ION-IMPLANTED SILICON-GERMANIUM ALLOYS (CONF ; CONF-9209200-1)

LATTICE DAMAGE IN ION-IMPLANTED SILICON-GERMANIUM ALLOYS (CONF ; CONF-9209200-1)
Paper図書
HAYNES, T.E.// HOLLAND, O.W. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))1992.
Other Libraries in Japan
  • Author HeadingHAYNES, T.E. HOLLAND, O.W.

ION IMPLANTATION AND DYNAMIC RECOVERY OF TIN-DOPED INDIUM OXIDE FILMS (CONF ; CONF-9308122-14)

ION IMPLANTATION AND DYNAMIC RECOVERY OF TIN-DOPED INDIUM OXIDE FILMS (CONF ; CONF-9308122-14)
Paper図書
SHIGESATO, YUZO// PAINE, D.C.// HAYNES, T.E. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES)// NATIONAL SCIENCE FOUNDATION, WASHINGTON, DC (UNITED STATES)// OFFICE OF NAVAL RESEARCH, WASHINGTON, DC (UNITED STATES))1993.
Other Libraries in Japan
  • Author HeadingSHIGESATO, YUZO PAINE, D.C. HAYNES, T.E. NATIONAL SCIENCE FOUNDATION, ...

DOSE RATE EFFECTS ON DAMAGE FORMATION IN ION-IMPLANTED GALLIUM ARSENIDE (CONF ; CONF-900936-9)

DOSE RATE EFFECTS ON DAMAGE FORMATION IN ION-IMPLANTED GALLIUM ARSENIDE (CONF ; CONF-900936-9)
Paper図書
HAYNES,T.E.//HOLLAND,O.W.(OAK RIDGE NATIONAL LAB.,TN(USA))1990.
Other Libraries in Japan

ION IMPLANTATION RELATED DEFECTS IN GAAS (CONF ; CONF-911202-52)

ION IMPLANTATION RELATED DEFECTS IN GAAS (CONF ; CONF-911202-52)
Paper図書
JONES, K.S.// BOLLONG, M.// HAYNES, T.E.// DEAL, M.D.// ALLEN, E.L.// ROBINSON, H.G. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))1991.
Other Libraries in Japan
  • Author HeadingJONES, K.S. BOLLONG, M. HAYNES, T.E. DEAL, M.D. ALLEN, E.L. ROBINS...

(ION BEAM DEPOSITION OF EPITAXIAL GERMANIUM AND GALLIUM ARSENIDE LAYERS). (ORNL ; ORNL/FTR-3308)

(ION BEAM DEPOSITION OF EPITAXIAL GERMANIUM AND GALLIUM ARSENIDE LAYERS). (ORNL ; ORNL/FTR-3308)
Paper図書
HAYNES, T.E.Oak Ridge National Laboratory(Oak Ridge National Laboratory)1989.
Other Libraries in Japan
  • Author HeadingHAYNES, T.E.

GROWTH OF EPITAXICAL SIC LAYERS ONTO ON- AND OFF-AXIS 6H-SIC SUBSTRATES BY ION BEAM DEPOSITION (CONF ; CONF-891119-39)

GROWTH OF EPITAXICAL SIC LAYERS ONTO ON- AND OFF-AXIS 6H-SIC SUBSTRATES BY ION BEAM DEPOSITION (CONF ; CONF-891119-39)
Paper図書
MORE, K.L.//WITHROW, S.P.// HAYNES, T.E.//ZUHR, R.A1989.
Other Libraries in Japan
  • Author HeadingMORE, K.L. WITHROW, S.P. HAYNES, T.E. ZUHR, R.A

FORMATION OF ALUMINUM FILMS ON SILICON BY ION BEAM DEPOSITION: A COMPARISON WITH IONIZED CLUSTER BEAM DEPOSITION (CONF ; CONF-900936-12)

FORMATION OF ALUMINUM FILMS ON SILICON BY ION BEAM DEPOSITION: A COMPARISON WITH IONIZED CLUSTER BEAM DEPOSITION (CONF ; CONF-900936-12)
Paper図書
ZUHR, R.A.// HAYNES, T.E.// GALLOWAY, M.D.// TANAKA, S.// YAMADA, A.// YAMADA, I. (OAK RIDGE NATIONAL LAB., TN (USA))1990.
Other Libraries in Japan
  • Author HeadingZUHR, R.A. HAYNES, T.E. GALLOWAY, M.D. TANAKA, S. YAM...

ION BEAM DEPOSITION OF EPITAXIAL GERMANIUM AND GALLIUM ARSENIDE LAYERS (CONF ; CONF-8906157-1)

ION BEAM DEPOSITION OF EPITAXIAL GERMANIUM AND GALLIUM ARSENIDE LAYERS (CONF ; CONF-8906157-1)
Paper図書
HAYNES, T.E.// ZUHR, R.A.// PENNYCOOK, S.J.// LARSON, B.C. (OAK RIDGE NATIONAL LAB., TN (USA))1989.
Other Libraries in Japan
  • Author HeadingHAYNES, T.E. ZUHR, R.A. PENNYCOOK, S.J. LA...

Effectiveness of thin film encapsulants for reducing evaporation during rapid thermal processing of GaAs (Sandia report ; SAND-86-1409C; CONF-861207-37; DE87003513)

Effectiveness of thin film encapsulants for reducing evaporation during rapid thermal processing of GaAs (Sandia report ; SAND-86-1409C; CONF-861207-37; DE87003513)
Paper図書
Haynes, T.E., Picraux, S.T., Chu, W.K.North Carolina Univ., Dept. of Physics and Astronomy; Sandia National Labs.1986.01.
Other Libraries in Japan
  • Author HeadingHaynes, T.E. Picraux, S.T. Chu, W.K.
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