花上, 康宏, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 木下, 恭一, Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.13-17
木下, 恭一, 中村, 裕彦, 花上, 康宏, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 足立, 聡, 越川, 尚清, 依田, 真一, Kinoshita, Kyoichi, Nakamura, Hirohiko, Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Adachi, Satoshi, Koshikawa, Naokiyo, Yoda, Shinichi宇宙開発事業団2002-12-27宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystalsp.11-18