yr 〜
yr

Search results 13

Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications
Digital文書・図像類
Kuzuhara, Masaaki, Tokuda, HirokuniIEEE.2015-02IEEE Transactions on Electron Devices62 2p.405-413
Other Libraries in Japan
  • Author HeadingKuzuhara, Masaaki Tokuda, Hirokuni

A model for calculating impact ionization transition rate in wurtzite GaN for use in breakdown voltage simulation

A model for calculating impact ionization transition rate in wurtzite GaN for use in breakdown voltage simulation
Digital文書・図像類
Kodama, Kazuki, Tokuda, Hirokuni, Kuzuhara, MasaakiAIP Publishing LLC.2013-07Journal of Applied Physics114 4p.44509-044509-6
Other Libraries in Japan
  • Author HeadingKodama, Kazuki Tokuda, Hirokuni Kuzuhara, Masaaki

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.
Digital文書・図像類
Hasan, Md. Tanvir, Asano, Takashi, Tokuda, Hirokuni, Kuzuhara, MasaakiInstitute of Electrical and Electronics Engineers2013-11IEEE Electrpm Device Letters34 11p.1379-1381
Other Libraries in Japan
  • Author HeadingHasan, Md. Tanvir Asano, Takashi Tokuda, Hirokuni Kuzuhara, Masaaki

Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures

Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures
Digital文書・図像類
Tokuda, Hirokuni, Kojima, Toshikazu, Kuzuhara, Masaaki2012-12Applied Physics Letters101p.262104-
Other Libraries in Japan
  • Author HeadingTokuda, Hirokuni Kojima, Toshikazu Kuzuhara, Masaaki

A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures

A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures
Digital文書・図像類
Tokuda, Hirokuni, Kojima, Toshikazu, Kuzuhara, Masaaki2012-08Applied Physics Letters101p.82111-
Other Libraries in Japan
  • Author HeadingTokuda, Hirokuni Kojima, Toshikazu Kuzuhara, Masaaki

Surface barrier height lowering at above 540K in AlInN/AlN/GaN heterostructures

Surface barrier height lowering at above 540K in AlInN/AlN/GaN heterostructures
Digital文書・図像類
HASAN, Md. Tanvir, TOKUDA, Hirokuni, KUZUHARA, Masaaki2011-09Applied physics letters99p.132102-
Other Libraries in Japan
  • Author HeadingHASAN, Md. Tanvir TOKUDA, Hirokuni KUZUHARA, Masaaki

Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures

Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
Digital文書・図像類
HATANO, Maiko, YAFUNE, Norimasa, TOKUDA, Hirokuni, YAMAMOTO, Yoshiyuki, HASHIMOTO, Shin, AKITA, Katsushi, KUZUHARA, Masaaki2012-08IEICE Trans. ElectronicsE95-Cp.1332-1336
Other Libraries in Japan
  • Author Heading...KITA, Katsushi KUZUHARA, Masaaki

High temperature electron transport properties in AlGaN/GaN heterostructures

High temperature electron transport properties in AlGaN/GaN heterostructures
Digital文書・図像類
KUZUHARA, Masaaki, TOKUDA, Hirokuni, YAMAZAKI, Jun2010-11Journal of Applied Physics108 104509p.1-5
Other Libraries in Japan
  • Author HeadingKUZUHARA, Masaaki TOKUDA, Hirokuni YAMAZAKI, Ju...

Temperature dependence of electron concentration and mobility in n-GaN measured up to 1020 K

Temperature dependence of electron concentration and mobility in n-GaN measured up to 1020 K
Digital文書・図像類
KUZUHARA, Masaaki, TOKUDA, Hirokuni, KODAMA, Kazuki2010-06Applied physics letters96 252103p.1-3
Other Libraries in Japan
  • Author HeadingKUZUHARA, Masaaki TOKUDA, Hirokuni KODAMA, Kazu...

Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures

Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
Digital文書・図像類
CHIKAOKA, Hironari, TAKAKUWA, Yoichi, SHIOJIMA, Kenji, KUZUHARA, Masaaki社団法人 電子情報通信学会2009-05-01IEICE Transactions on ElectronicsE92-C 5p.691-695
Other Libraries in Japan
  • Author HeadingCHIKAOKA, Hironari TAKAKUWA, Yoichi SHIOJIMA, Kenji KUZUHARA, Masaaki

I-V and C-V characteristics of rare-earth-metal/p-GaN Schottky contacts

I-V and C-V characteristics of rare-earth-metal/p-GaN Schottky contacts
Digital文書・図像類
FUKUSHIMA, Yoshihiro, OGISU, Keita, KUZUHARA, Masaaki, SHIOJIMA, KenjiWILEY-VCH Verlag GmbH & Co. KGaA2009-05Physica Status Solidi (c)6 S2p.S856-S859
Other Libraries in Japan
  • Author HeadingFUKUSHIMA, Yoshihiro OGISU, Keita KUZUHARA, Masaaki SHIOJIMA, Kenji

Special section on fundamentals and applications of advanced semiconductor devices

Special section on fundamentals and applications of advanced semiconductor devices
Digital文書・図像類
KUZUHARA, MasaakiThe Institute of Electronics, Information and Communication Engineers2008-05-01IEICE TRANSACTIONS on ElectronicsE91-C 5p.675-675
Other Libraries in Japan
  • Author HeadingKUZUHARA, Masaaki

イオン注入GaAsの活性化熱処理に関する研究

イオン注入GaAsの活性化熱処理に関する研究
Digital博士論文
葛原, 正明京都大学1991-03-23
Available onlineOther Libraries in Japan

Reached to the end of result.