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Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications
Digital文書・図像類
Kuzuhara, Masaaki, Tokuda, HirokuniIEEE.2015-02IEEE Transactions on Electron Devices62 2p.405-413
Other Libraries in Japan
  • Author HeadingKuzuhara, Masaaki Tokuda, Hirokuni

A model for calculating impact ionization transition rate in wurtzite GaN for use in breakdown voltage simulation

A model for calculating impact ionization transition rate in wurtzite GaN for use in breakdown voltage simulation
Digital文書・図像類
Kodama, Kazuki, Tokuda, Hirokuni, Kuzuhara, MasaakiAIP Publishing LLC.2013-07Journal of Applied Physics114 4p.44509-044509-6
Other Libraries in Japan
  • Author HeadingKodama, Kazuki Tokuda, Hirokuni Kuzuhara, Masaaki

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.
Digital文書・図像類
Hasan, Md. Tanvir, Asano, Takashi, Tokuda, Hirokuni, Kuzuhara, MasaakiInstitute of Electrical and Electronics Engineers2013-11IEEE Electrpm Device Letters34 11p.1379-1381
Other Libraries in Japan
  • Author HeadingHasan, Md. Tanvir Asano, Takashi Tokuda, Hirokuni Kuzuhara, Masaaki

A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures

A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures
Digital文書・図像類
Tokuda, Hirokuni, Kojima, Toshikazu, Kuzuhara, Masaaki2012-08Applied Physics Letters101p.82111-
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  • Author HeadingTokuda, Hirokuni Kojima, Toshikazu Kuzuhara, M...

Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures

Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures
Digital文書・図像類
Tokuda, Hirokuni, Kojima, Toshikazu, Kuzuhara, Masaaki2012-12Applied Physics Letters101p.262104-
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  • Author HeadingTokuda, Hirokuni Kojima, Toshikazu Kuzuhara, M...

Surface barrier height lowering at above 540K in AlInN/AlN/GaN heterostructures

Surface barrier height lowering at above 540K in AlInN/AlN/GaN heterostructures
Digital文書・図像類
HASAN, Md. Tanvir, TOKUDA, Hirokuni, KUZUHARA, Masaaki2011-09Applied physics letters99p.132102-
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  • Author HeadingHASAN, Md. Tanvir TOKUDA, Hirokuni KUZUHARA, Masaaki

Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures

Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
Digital文書・図像類
HATANO, Maiko, YAFUNE, Norimasa, TOKUDA, Hirokuni, YAMAMOTO, Yoshiyuki, HASHIMOTO, Shin, AKITA, Katsushi, KUZUHARA, Masaaki2012-08IEICE Trans. ElectronicsE95-Cp.1332-1336
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  • Author Heading...FUNE, Norimasa TOKUDA, Hirokuni YAMAMOTO, Yoshiyuki HASHIMOTO...

High temperature electron transport properties in AlGaN/GaN heterostructures

High temperature electron transport properties in AlGaN/GaN heterostructures
Digital文書・図像類
KUZUHARA, Masaaki, TOKUDA, Hirokuni, YAMAZAKI, Jun2010-11Journal of Applied Physics108 104509p.1-5
Other Libraries in Japan
  • Author HeadingKUZUHARA, Masaaki TOKUDA, Hirokuni YAMAZAKI, Jun

Temperature dependence of electron concentration and mobility in n-GaN measured up to 1020 K

Temperature dependence of electron concentration and mobility in n-GaN measured up to 1020 K
Digital文書・図像類
KUZUHARA, Masaaki, TOKUDA, Hirokuni, KODAMA, Kazuki2010-06Applied physics letters96 252103p.1-3
Other Libraries in Japan
  • Author HeadingKUZUHARA, Masaaki TOKUDA, Hirokuni KODAMA, Kazuki

GaAs陽極酸化とそのMOSデバイスへの応用に関する研究

GaAs陽極酸化とそのMOSデバイスへの応用に関する研究
Paper博士論文
徳田博邦 [著]<UT51-54-A179>
National Diet Library

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