木下, 恭一, 加藤, 浩和, 松本, 聡, 依田, 真一, Yu, Jianding, 夏井坂, 誠, 正木, 匡彦, 越川, 尚清, 中村, 裕広, 中村, 富久, Kinoshita, Kyoichi, Kato, Hirokazu, Matsumoto, Satoshi, Yoda, Shinichi, Natsuisaka, Makoto, Masaki, Tadahiko, Koshikawa, Naokiyo, Nakamura, Yasuhiro, Nakamura, Tomihisa宇宙開発事業団2001-03-01宇宙開発事業団技術報告 = NASDA Technical Memorandump.157-163
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- Subject HeadingInAs GaAs系 相互拡散測定 相互拡散係数......ガラスシール技法 シアセル法 InAs GaAs system interdiffusion measure...
木下, 恭一, 加藤, 浩和, 松本, 聡, 依田, 真一, Yu, J., 夏井坂, 誠, 正木, 匡彦, 越川, 尚清, 中村, 裕広, 中村, 富久, Kinoshita, Kyoichi, Kato, Hirokazu, Matsumoto, Satoshi, Yoda, Shinichi, Natsuisaka, Makoto, Masaki, Tadahiko, Koshikawa, Naokiyo, Nakamura, Yasuhiro, Nakamura, Tomihisa宇宙開発事業団2000-09-29NASDA Technical Memorandump.43-49
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- Subject Heading... Tr-Ia-7 標準的組成 InAs GaAs system InAs (113)InAs system ...
中村, 裕彦, 徂徠, 正夫, 石川, 正道, 加藤, 浩和, 依田, 真一, 木下, 恭一, Nakamura, Hirohiko, Sorai, Masao, Ishikawa, Masamichi, Kato, Hirokazu, Yoda, Shinichi, Kinoshita, Kyoichi宇宙開発事業団1999-09-30宇宙開発事業団技術報告 = NASDA Technical Memorandump.45-50
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- Subject Heading...xcess enthalpy InAs GaAs system differential lattice p...
平岡, 良章, 池上, 圭介, 前川, 透, 松本, 聡, Hiraoka, Yoshiaki, Ikegami, Keisuke, Maekawa, Toru, Matsumoto, Satoshi宇宙開発事業団2000-09-29NASDA Technical Memorandump.29-41
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- Subject Heading...濃度差 重力加速 単成分結晶 InAs GaAs binary semiconductor microgra...
宇宙開発事業団, Natl. Space Development Agency of Japan宇宙開発事業団2000-09-29NASDA Technical Memorandump.1-86
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- Subject Heading... mixed crystal InAs GaAs binary semiconductor g jitter