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Constitutional supercooling in the crystal growth of In(x)Ga(1-x)As

Constitutional supercooling in the crystal growth of In(x)Ga(1-x)As
Digital文書・図像類
木下, 恭一, 緒方, 康行, 越川, 尚清, 足立, 聡, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 杉木, 喜洋, 前川, 透, 依田, 真一, Kinoshita, Kyoichi, Ogata, Yasuyuki, Koshikawa, Naokiyo, Adachi, Satoshi, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Sugiki, Yoshihiro, Maekawa, Toru, Yoda, Shinichi宇宙開発事業団2003-08-29宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.19-26
Other Libraries in Japan
  • Subject Heading...crystal growth TLZ method supercooling freezing tempera...

Crystal growth of an InAs-GaAs binary semiconductor under terrestrial gravitational conditions

Crystal growth of an InAs-GaAs binary semiconductor under terrestrial gravitational conditions
Digital文書・図像類
前川, 透, 福田, 尚宏, 松本, 聡, 足立, 聡, 依田, 真一, 木下, 恭一, Maekawa, Toru, Fukuda, Takahiro, Matsumoto, Satoshi, Adachi, Satoshi, Yoda, Shinichi, Kinoshita, Kyoichi宇宙開発事業団2003-08-29宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.27-37
Other Libraries in Japan
  • Subject Heading...rical analysis TLZ method supercooling

Investigation of preparation methods of InGaAs materials for crystal growth

Investigation of preparation methods of InGaAs materials for crystal growth
Digital文書・図像類
住友電気工業, Sumitomo Electric Industries Ltd.宇宙航空研究開発機構2004-03-25宇宙航空研究開発機構契約報告 = JAXA Contract ReportJAXA-CR-03-002E
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  • Subject Heading...single crystal TLZ method Raman scattering temperature ...

Annual report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs). Growth of homogeneous crystals

Annual report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs). Growth of homogeneous crystals
Digital文書・図像類
宇宙開発事業団, National Space Development Agency of Japan宇宙開発事業団2003-08-29宇宙開発事業団技術報告 = NASDA Technical Memorandum
Other Libraries in Japan
  • Subject Heading...度 過冷却 モデル 並進運動 TLZ method crystal growth temperature gr...

Verification of homogeneous In(x)Ga(1-x)As crystal growth by the TLZ (Traveling Liquidus-Zone) method

Verification of homogeneous In(x)Ga(1-x)As crystal growth by the TLZ (Traveling Liquidus-Zone) method
Digital文書・図像類
鶴, 哲也, 岩井, 正行, 村松, 祐治, 木下, 恭一, 緒方, 康行, 足立, 聡, 越川, 尚清, 依田, 真一, Tsuru, Tetsuya, Iwai, Masayuki, Muramatsu, Yuji, Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Koshikawa, Naokiyo, Yoda, Shinichi宇宙開発事業団2003-08-29宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.11-18
Other Libraries in Japan
  • Subject Heading...度 均一性 モデル 並進運動 TLZ method crystal growth temperature gr...

High quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates

High quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates
Digital文書・図像類
木下, 恭一, 植田, 稔晃, 足立, 聡, 荒井, 康智, 宮田, 浩旭, 田中, 涼太, 村松, 祐治, 依田, 眞一, Kinoshita, Kyoichi, Ueda, Toshiaki, Adachi, Satoshi, Arai, Yasutomo, Miyata, Hiroaki, Tanaka, Ryota, Muramatsu, Yuji, Yoda, Shinichi宇宙航空研究開発機構2007-03-30宇宙航空研究開発機構研究開発報告 = JAXA Research and Development ReportJAXA-RR-06-014E
Other Libraries in Japan
  • Subject Heading...us-zone method TLZ method indium gallium arsenide cryst...

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