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検索結果 6 件

I[lc]n(sub 0.3)G[lc]a(sub 0.7)A[lc]s seed crystal preparation using the multi-component zone melting method

I[lc]n(sub 0.3)G[lc]a(sub 0.7)A[lc]s seed crystal preparation using the multi-component zone melting method
デジタル文書・図像類
児玉, 茂夫, 木下, 恭一, 花上, 康宏, 依田, 真一, Kodama, Shigeo, Kinoshita, Kyoichi, Hanaue, Yasuhiro, Yoda, Shinichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.59-64
全国の図書館
  • 件名...rystallization In(sub x)Ga(sub 1 minus x)As single crystal temperature gr...

Raman characterization of cylindrical polycrystalline I[lc]n(x)G[lc]a(1-x)A[lc]s starting material

Raman characterization of cylindrical polycrystalline I[lc]n(x)G[lc]a(1-x)A[lc]s starting material
デジタル文書・図像類
Verma, P., Islam, M. R., 山田, 正良, 龍見, 雅美, 木下, 恭一, Yamada, Masayoshi, Tatsumi, Masami, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.85-89
全国の図書館
  • 件名...乱 成分プロファイル 均質性 In(sub x)Ga(sub 1 minus x)As polycrystal crystal growth co...

Numerical analysis of a cartridge in the traveling liquidus-zone method under various gravity conditions

Numerical analysis of a cartridge in the traveling liquidus-zone method under various gravity conditions
デジタル文書・図像類
足立, 聡, 依田, 真一, 木下, 恭一, Adachi, Satoshi, Yoda, Shinichi, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.65-84
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  • 件名...e distribution In(sub x)Ga(sub 1 minus x)As phase diagram microgravity

Quantitative modeling of the traveling liquidus-zone method

Quantitative modeling of the traveling liquidus-zone method
デジタル文書・図像類
中村, 裕彦, 花上, 康宏, 木下, 恭一, 依田, 真一, Nakamura, Hirohiko, Hanaue, Yasuhiro, Kinoshita, Kyoichi, Yoda, Shinichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.19-40
全国の図書館
  • 件名...ature gradient In(sub x)Ga(sub 1 minus x)As

Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method

Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method
デジタル文書・図像類
花上, 康宏, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 木下, 恭一, Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.13-17
全国の図書館
  • 件名...ature gradient In(sub x)Ga(sub 1 minus x)As semiconductor homogeneity hea...

Annual report of the semiconductor team in NASDA Space Utilization Research Program (2000): Effects of microgravity environment on growth related properties of semiconductor alloys (I[lc]nG[lc]aA[lc]s)-Growth of homogeneous crystals

Annual report of the semiconductor team in NASDA Space Utilization Research Program (2000): Effects of microgravity environment on growth related properties of semiconductor alloys (I[lc]nG[lc]aA[lc]s)-Growth of homogeneous crystals
デジタル文書・図像類
宇宙開発事業団, National Space Development Agency of Japan宇宙開発事業団2001-12-25宇宙開発事業団技術報告 = NASDA Technical Memorandum
全国の図書館
  • 件名...配 状態図 熱拡散率 半導体 In(sub x)Ga(sub 1 minus x)As traveling liquidus zone metho...

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