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新準結晶の探索に関する研究

新準結晶の探索に関する研究
Paper博士論文
越川尚清 [著][越川尚清][2001]<UT51-2004-G48>
National Diet Library

Numerical study of thermal conduction influence on homogeneity of InGaAs crystals

Numerical study of thermal conduction influence on homogeneity of InGaAs crystals
Digital文書・図像類
足立, 聡, 緒方, 康行, 吉崎, 泉, 松本, 聡, 越川, 尚清, 高柳, 昌弘, 木下, 恭一, 依田, 眞一, Adachi, Satoshi, Ogata, Yasuyuki, Yoshizaki, Izumi, Matsumoto, Satoshi, Koshikawa, Naokiyo, Takayanagi, Masahiro, Kinoshita, Kyoichi, Yoda, Shinichi宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-SP-05-036Ep.21-32
Other Libraries in Japan
  • Author Heading...umoto, Satoshi Koshikawa, Naokiyo Takayanagi, Masahiro Kinoshit...

Numerical investigation on two-dimensionality in the Traveling Liquidus-Zone method

Numerical investigation on two-dimensionality in the Traveling Liquidus-Zone method
Digital文書・図像類
足立, 聡, 緒方, 康行, 松本, 聡, 越川, 尚清, 高柳, 昌弘, 依田, 真一, 木下, 恭一, Adachi, Satoshi, Ogata, Yasuyuki, Matsumoto, Satoshi, Koshikawa, Naokiyo, Takayanagi, Masahiro, Yoda, Shinichi, Kinoshita, Kyoichi宇宙航空研究開発機構2005-03-31宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-RR-04-022Ep.21-27
Other Libraries in Japan
  • Author Heading...umoto, Satoshi Koshikawa, Naokiyo Takayanagi, Masahiro Yoda, Sh...

Estimation of diffusion coefficient by using numerical simulation of the Traveling Liquidus-Zone method

Estimation of diffusion coefficient by using numerical simulation of the Traveling Liquidus-Zone method
Digital文書・図像類
足立, 聡, 緒方, 康行, 松本, 聡, 越川, 尚清, 高柳, 昌弘, 依田, 真一, 木下, 恭一, Adachi, Satoshi, Ogata, Yasuyuki, Matsumoto, Satoshi, Koshikawa, Naokiyo, Takayanagi, Masahiro, Yoda, Shinichi, Kinoshita, Kyoichi宇宙航空研究開発機構2005-03-31宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-RR-04-022Ep.28-32
Other Libraries in Japan
  • Author Heading...umoto, Satoshi Koshikawa, Naokiyo Takayanagi, Masahiro Yoda, Sh...

In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method

In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method
Digital文書・図像類
木下, 恭一, 緒方, 康行, 足立, 聡, 越川, 尚清, 鶴, 哲也, 宮田, 浩旭, 村松, 祐治, 依田, 真一, Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Koshikawa, Naokiyo, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Yoda, Shinichi宇宙航空研究開発機構2005-03-31宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-RR-04-022Ep.14-20
Other Libraries in Japan
  • Author Heading...dachi, Satoshi Koshikawa, Naokiyo Tsuru, Tetsuya Miyata, Hiroak...

Numerical investigation on feasibility of a flight experiment of the traveling liquidus-zone method

Numerical investigation on feasibility of a flight experiment of the traveling liquidus-zone method
Digital文書・図像類
足立, 聡, 越川, 尚清, 松本, 聡, 弓削, 定義, 依田, 真一, 木下, 恭一, Adachi, Satoshi, Koshikawa, Naokiyo, Matsumoto, Satoshi, Yuge, Sadayoshi, Yoda, Shinichi, Kinoshita, Kyoichi宇宙開発事業団2002-12-27宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystalsp.29-54
Other Libraries in Japan
  • Author Heading...dachi, Satoshi Koshikawa, Naokiyo Matsumoto, Satoshi Yuge, Sada...

Constitutional supercooling in the crystal growth of In(x)Ga(1-x)As

Constitutional supercooling in the crystal growth of In(x)Ga(1-x)As
Digital文書・図像類
木下, 恭一, 緒方, 康行, 越川, 尚清, 足立, 聡, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 杉木, 喜洋, 前川, 透, 依田, 真一, Kinoshita, Kyoichi, Ogata, Yasuyuki, Koshikawa, Naokiyo, Adachi, Satoshi, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Sugiki, Yoshihiro, Maekawa, Toru, Yoda, Shinichi宇宙開発事業団2003-08-29宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.19-26
Other Libraries in Japan
  • Author Heading...gata, Yasuyuki Koshikawa, Naokiyo Adachi, Satoshi Iwai, Masayuk...

Verification of homogeneous In(x)Ga(1-x)As crystal growth by the TLZ (Traveling Liquidus-Zone) method

Verification of homogeneous In(x)Ga(1-x)As crystal growth by the TLZ (Traveling Liquidus-Zone) method
Digital文書・図像類
鶴, 哲也, 岩井, 正行, 村松, 祐治, 木下, 恭一, 緒方, 康行, 足立, 聡, 越川, 尚清, 依田, 真一, Tsuru, Tetsuya, Iwai, Masayuki, Muramatsu, Yuji, Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Koshikawa, Naokiyo, Yoda, Shinichi宇宙開発事業団2003-08-29宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.11-18
Other Libraries in Japan
  • Author Heading...dachi, Satoshi Koshikawa, Naokiyo Yoda, Shinichi

Modeling and experimental study on the traveling liquidus-zone method

Modeling and experimental study on the traveling liquidus-zone method
Digital文書・図像類
木下, 恭一, 中村, 裕彦, 花上, 康宏, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 足立, 聡, 越川, 尚清, 依田, 真一, Kinoshita, Kyoichi, Nakamura, Hirohiko, Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Adachi, Satoshi, Koshikawa, Naokiyo, Yoda, Shinichi宇宙開発事業団2002-12-27宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystalsp.11-18
Other Libraries in Japan
  • Author Heading...dachi, Satoshi Koshikawa, Naokiyo Yoda, Shinichi

InAs-GaAs interdiffusion measurements

InAs-GaAs interdiffusion measurements
Digital文書・図像類
木下, 恭一, 加藤, 浩和, 松本, 聡, 依田, 真一, Yu, Jianding, 夏井坂, 誠, 正木, 匡彦, 越川, 尚清, 中村, 裕広, 中村, 富久, Kinoshita, Kyoichi, Kato, Hirokazu, Matsumoto, Satoshi, Yoda, Shinichi, Natsuisaka, Makoto, Masaki, Tadahiko, Koshikawa, Naokiyo, Nakamura, Yasuhiro, Nakamura, Tomihisa宇宙開発事業団2001-03-01宇宙開発事業団技術報告 = NASDA Technical Memorandump.157-163
Other Libraries in Japan
  • Author Heading...saki, Tadahiko Koshikawa, Naokiyo Nakamura, Yasuhiro Nakamura, ...

InAs-GaAs interdiffusion measurements

InAs-GaAs interdiffusion measurements
Digital文書・図像類
木下, 恭一, 加藤, 浩和, 松本, 聡, 依田, 真一, Yu, J., 夏井坂, 誠, 正木, 匡彦, 越川, 尚清, 中村, 裕広, 中村, 富久, Kinoshita, Kyoichi, Kato, Hirokazu, Matsumoto, Satoshi, Yoda, Shinichi, Natsuisaka, Makoto, Masaki, Tadahiko, Koshikawa, Naokiyo, Nakamura, Yasuhiro, Nakamura, Tomihisa宇宙開発事業団2000-09-29NASDA Technical Memorandump.43-49
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  • Author Heading...saki, Tadahiko Koshikawa, Naokiyo Nakamura, Yasuhiro Nakamura, ...

クリーンベンチの開発　その1

クリーンベンチの開発　その1
Digital文書・図像類
宇佐美, 論, 村上, 敬司, 藤本, 信義, 越川, 尚清, 安倍, 隆介, 林, 恭輔, 伊藤, 正巳, 園部, 正義, Usami, Ron, Murakami, Keiji, Fujimoto, Nobuyoshi, Koshikawa, Naokiyo, Abe, Ryusuke, Hayashi, Kyosuke, Ito, Masami, Sonobe, Masayoshi宇宙開発事業団1997-01-31宇宙開発事業団技術報告 = NASDA Technical Memorandump.53-61
Other Libraries in Japan
  • Author Heading...oto, Nobuyoshi Koshikawa, Naokiyo Abe, Ryusuke Hayashi, Kyosuke...

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