木下, 恭一, 植田, 稔晃, 足立, 聡, 荒井, 康智, 依田, 眞一, Kinoshita, Kyoichi, Ueda, Toshiaki, Adachi, Satoshi, Arai, Yasutomo, Yoda, Shinichi宇宙航空研究開発機構2008-02-29宇宙航空研究開発機構研究開発報告 = JAXA Research and Development ReportJAXA-RR-07-015E
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- Subject Heading...onductor laser traveling liquidus zone method scale up improvement convecti...
宮田, 浩旭, 緒方, 康行, 足立, 聡, 鶴, 哲也, 村松, 祐治, 木下, 恭一, 小田原, 修, 依田, 眞一, Miyata, Hiroaki, Ogata, Yasuyuki, Adachi, Satoshi, Tsuru, Tetsuya, Muramatsu, Yuji, Kinoshita, Kyoichi, Odawara, Osamu, Yoda, Shinichi宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-SP-05-036Ep.13-20
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- Subject Heading...格子 polycrystal traveling liquidus zone method optical communication photolu...
鶴, 哲也, 宮田, 浩旭, 村松, 祐治, 緒方, 康行, 木下, 恭一, 足立, 聡, 依田, 眞一, 荒井, 昌和, 渡辺, 孝夫, 近藤, 康洋, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Ogata, Yasuyuki, Kinoshita, Kyoichi, Adachi, Satoshi, Yoda, Shinichi, Arai, Masakazu, Watanabe, Takao, Kondo, Yasuhiro宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-SP-05-036Ep.1-6
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- Subject Heading...single crystal traveling liquidus zone method optical communication photolu...
足立, 聡, 緒方, 康行, 吉崎, 泉, 松本, 聡, 越川, 尚清, 高柳, 昌弘, 木下, 恭一, 依田, 眞一, Adachi, Satoshi, Ogata, Yasuyuki, Yoshizaki, Izumi, Matsumoto, Satoshi, Koshikawa, Naokiyo, Takayanagi, Masahiro, Kinoshita, Kyoichi, Yoda, Shinichi宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-SP-05-036Ep.21-32
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- Subject Heading... boron nitride traveling liquidus zone method
宇宙航空研究開発機構, Japan Aerospace Exploration Agency宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special PublicationJAXA-SP-05-036E
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- Subject Heading... communication traveling liquidus zone method photoluminescence vapor phase...
木下, 恭一, 緒方, 康行, 足立, 聡, 鶴, 哲也, 宮田, 浩旭, 村松, 祐治, 依田, 眞一, Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Yoda, Shinichi宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-SP-05-036Ep.7-12
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- Subject Heading...single crystal traveling liquidus zone method optical communication photolu...
中村, 裕彦, 花上, 康宏, 木下, 恭一, 依田, 真一, Nakamura, Hirohiko, Hanaue, Yasuhiro, Kinoshita, Kyoichi, Yoda, Shinichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.19-40
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- Subject Heading...)Ga(sub 1-x)As traveling liquidus zone method quantitative model analysis c...
足立, 聡, 依田, 真一, 木下, 恭一, Adachi, Satoshi, Yoda, Shinichi, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.65-84
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- Subject Heading...ational effect traveling liquidus zone method numerical analysis convective...
花上, 康宏, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 木下, 恭一, Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.13-17
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- Subject Heading...crystal growth traveling liquidus zone method temperature gradient In(sub x...
宇宙開発事業団, National Space Development Agency of Japan宇宙開発事業団2001-12-25宇宙開発事業団技術報告 = NASDA Technical Memorandum
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- Subject Heading...b 1 minus x)As traveling liquidus zone method single crystal growth convect...