「"In(sub x)Ga(sub 1-x)As"」の検索結果 | NDLサーチ

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Preparation of I[lc]nG[lc]aA[lc]s starting materials having the gradient I[lc]nA[lc]s concentration

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弘田, 龍, 龍見, 雅美, 花上, 康宏, 木下, 恭一, Hirota, Ryu, Tatsumi, Masami, Hanaue, Yasuhiro, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.51-57

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件名In(sub x)Ga(sub 1-x)As InAs 移行液相ゾーン法方向性凝固温度プロファイル ...

I[lc]n(sub 0.3)G[lc]a(sub 0.7)A[lc]s seed crystal preparation using the multi-component zone melting method

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児玉, 茂夫, 木下, 恭一, 花上, 康宏, 依田, 真一, Kodama, Shigeo, Kinoshita, Kyoichi, Hanaue, Yasuhiro, Yoda, Shinichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.59-64

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件名ゾーン溶融法種結晶過程 In(sub x)Ga(sub 1-x)As 短結晶温度勾配基板均質性 zone melting ...

Raman characterization of cylindrical polycrystalline I[lc]n(x)G[lc]a(1-x)A[lc]s starting material

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Verma, P., Islam, M. R., 山田, 正良, 龍見, 雅美, 木下, 恭一, Yamada, Masayoshi, Tatsumi, Masami, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.85-89

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件名In(sub x)Ga(sub 1-x)As 多結晶質結晶成長対流微小重力ラマン散乱成分プロフ...

Quantitative modeling of the traveling liquidus-zone method

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中村, 裕彦, 花上, 康宏, 木下, 恭一, 依田, 真一, Nakamura, Hirohiko, Hanaue, Yasuhiro, Kinoshita, Kyoichi, Yoda, Shinichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.19-40

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件名...長半導体均質性温度勾配 In(sub x)Ga(sub 1-x)As traveling liquidus zone metho...

Numerical analysis of a cartridge in the traveling liquidus-zone method under various gravity conditions

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足立, 聡, 依田, 真一, 木下, 恭一, Adachi, Satoshi, Yoda, Shinichi, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.65-84

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件名重力効果移行液相ゾーン法数値解析対流温度分布 In(sub x)Ga(sub 1-x)As 状態図微小重力 gravitational effect...

Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method

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花上, 康宏, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 木下, 恭一, Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.13-17

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件名単結晶成長移行液相ゾーン法温度勾配 In(sub x)Ga(sub 1-x)As 半導体均質性熱シンク熱伝播 single cryst...
並列タイトル等（連結）移行液相ゾーン法によるIn(sub x)Ga(sub 1-x)As均質単結晶成長の実験研究
並列タイトル等移行液相ゾーン法によるIn(sub x)Ga(sub 1-x)As均質単結晶成長の実験研究

Annual report of the semiconductor team in NASDA Space Utilization Research Program (2000): Effects of microgravity environment on growth related properties of semiconductor alloys (I[lc]nG[lc]aA[lc]s)-Growth of homogeneous crystals

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宇宙開発事業団, National Space Development Agency of Japan宇宙開発事業団2001-12-25宇宙開発事業団技術報告 = NASDA Technical Memorandum

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件名In(sub x)Ga(sub 1-x)As 移行液相ゾーン法単結晶成長対流微小重力ラマン散乱 ...

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