yr 〜
yr

Search results 496

Japanese journal of applied physics Part. 1 Regular papers, brief communications & review papers : JJAP

Japanese journal of applied physics Part. 1 Regular papers, brief communications & review papers : JJAP
PaperDigital雑誌
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics1982-2007<Z53-A375>
Available onlineNational Diet Library
  •  
  •  
  •  
  •  
  •  
    •  

Raman Scattering Characterization of Annealed GaN_xAs_<1-x> Layers

Raman Scattering Characterization of Annealed GaN_xAs_<1-x> Layers
Digital文書・図像類
FURUHATA, Takashi, KITANO, Takeshi, MAGARA, Hiroyuki, MASUDA, Atsushi, TANAKA, So, MOTO, Akihiro, TAKAHASHI, Mitsuo, TANABE, Tatsuya, TAKAGISHI, Shigenori, YAMAMOTO, Akio, HASHIMOTO, AkihiroThe Institute of Pure and Applied Physics2009-11-30Proceedings of International Workshop on Nitride Semiconductorsp.673-676
Other Libraries in Japan

An Indium Surfactant Effect in Cubic GaN Rf-MBE Growth

An Indium Surfactant Effect in Cubic GaN Rf-MBE Growth
Digital文書・図像類
NISHIO, Yukihiro, MORI, Hiroki, MASUDA, Atsushi, YAMAMOTO, Akio, HASHIMOTO, AkihiroThe Institute of Pure and Applied Physics2000-11-30Proceedings of International Workshop on Nitride Semiconductorsp.178-181
Other Libraries in Japan

Growth Rate and Its Limiting Process for Metalorganic Vapor Phase Epitaxial InN

Growth Rate and Its Limiting Process for Metalorganic Vapor Phase Epitaxial InN
Digital文書・図像類
ADACHI, Masato, MURAKAMI, Yasuyuki, HASHIMOTO, Akihiro, YAMAMOTO, AkioThe Institute of Pure and Applied Physics2000-11-30Proceedings of International Workshop on Nitride Semiconductorsp.339-342
Other Libraries in Japan

Marked Substrate-Surface Dependence of In Content Included in High-Temperature Grown InN

Marked Substrate-Surface Dependence of In Content Included in High-Temperature Grown InN
Digital文書・図像類
ADACHI, Masato, SEKI, Akihisa, HASHIMOTO, Akihiro, YAMAMOTO, AkioThe Institute of Pure and Applied Physics2000-11-30Proceedings of International Workshop on Nitride Semiconductorsp.347-350
Other Libraries in Japan

Significance of the Suppression of Substrate Surface Nitridation for Epitaxial Growth of Wurtzite InN on GaP(111) and InP(111) Substrates

Significance of the Suppression of Substrate Surface Nitridation for Epitaxial Growth of Wurtzite InN on GaP(111) and InP(111) Substrates
Digital文書・図像類
BHUIYAN, Ashraful Ghani, YAMAMOTO, Akio, HASHIMOTO, Akihiro, ISHIGAMI, RyuyaThe Institute of Pure and Applied Physics2000-11-30Proceedings of International Workshop on Nitride Semiconductorsp.343-346
Other Libraries in Japan

Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces ―Revelation of threading dislocations in GaN―

Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces ―Revelation of threading dislocations in GaN―
Digital文書・図像類
YAMAMOTO, Akio, AZUMA, Katsuhiko, YASUDA, Tomomi, HASHIMOTO, AkihiroThe Institute of Pure and Applied Physics2000-11-30Proceedings of International Workshop on Nitride Semiconductorsp.778-781
Other Libraries in Japan

Proceedings of international workshop on nitride semiconductors

Proceedings of international workshop on nitride semiconductors
Paper図書
The Institute of Pure and Applied Physicsc2000
Other Libraries in Japan
  • Author HeadingThe Institute of Pure and Applied Physics

Applied Physics Express

Applied Physics Express
Digital電子書籍・電子雑誌雑誌
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
National Diet Library

IPAP conference series

IPAP conference series
Paper図書
The Institute of Pure and Applied Physics
Other Libraries in Japan

Reached to the end of result.