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Solid state topics (general) -- 218th ECS meeting : symposium "solid state topics general session" : 218th meeting of the Electrochemical Society : Oct 2010, Las Vegas, NV. (ECS Transactions ; 33 (no. 31))

Solid state topics (general) -- 218th ECS meeting : symposium "solid state topics general session" : 218th meeting of the Electrochemical Society : Oct 2010, Las Vegas, NV. (ECS Transactions ; 33 (no. 31))
紙図書
Electrochemical Societyc2011.<M17-12-2594>
国立国会図書館
  • 著者標目Sundaram, K. B. Misra, D. Baca, A.

IASTED International Conference on Biomedical Engineering (BioMed 2016) : Innsbruck, Austria 15-16 February 2016 : pbk

IASTED International Conference on Biomedical Engineering (BioMed 2016) : Innsbruck, Austria 15-16 February 2016 : pbk
紙図書
editors, A. BacaACTA Press2016
全国の図書館
  • 著者標目...al Engineering Baca, A. International Association of ...

ENVIRONMENTALLY CONSCIOUS MANUFACTURING LIFE CYCLE ANALYSIS (SAND ; SAND-93-1031C)

ENVIRONMENTALLY CONSCIOUS MANUFACTURING LIFE CYCLE ANALYSIS (SAND ; SAND-93-1031C)
紙図書
WATKINS, R.D.// BACA, A. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1993.
全国の図書館
  • 著者標目WATKINS, R.D. BACA, A.

OPTICALLY CONTROLLED CURRENT FILAMENTATION IN GAAS PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES (SAND ; SAND-93-1629C)

OPTICALLY CONTROLLED CURRENT FILAMENTATION IN GAAS PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES (SAND ; SAND-93-1629C)
紙図書
ZUTAVERN, F.J.// BACA, A.// HELGESON, W.D.// HJALMARSON, H.P.// LOUBRIEL, G.M.// MCLAUGHLIN, D.L.// O'MALLEY, M.W. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1993.
全国の図書館
  • 著者標目ZUTAVERN, F.J. BACA, A. HELGESON, W.D. HJALMARSON, H....

State-of-the-art program on compound semiconductors 50 (SOTAPOCS 50) -and- processes at the semiconductor solution interface 3. : 50th state-of-the-art symposium on compound semiconductors : 215th meeting of the Electrochemical Society : 3rd international symposium on processes at the semiconductor-solution interface (PSSI 3) : 2009 San Francisco meeting : state of the art program on compound semiconductors : May 2009, San Francisco, CA. (ECS Transactions ; 19 (no. 3))

State-of-the-art program on compound semiconductors 50 (SOTAPOCS 50) -and- processes at the semiconductor solution interface 3. : 50th state-of-the-art symposium on compound semiconductors : 215th meeting of the Electrochemical Society : 3rd international symposium on processes at the semiconductor-solution interface (PSSI 3) : 2009 San Francisco meeting : state of the art program on compound semiconductors : May 2009, San Francisco, CA. (ECS Transactions ; 19 (no. 3))
紙図書
Electrochemical Societyc2009.<M17-10-1502>
国立国会図書館
  • 著者標目Baca, A. G. Electrochemical Society. M...

GaAs-based JFET and PHEMT technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz SAND980624C DE98 003345

GaAs-based JFET and PHEMT technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz SAND980624C DE98 003345
マイクロ規格・テクニカルリポート類
Baca, A. G, Hietala, V. M, Greenway, D, Shul, R. J, Hafich, M. J1998<LS-DE98/003345>
国立国会図書館

Ultra-low power microwave CHFET integrated circuit development SAND980765 DE98 004795

Ultra-low power microwave CHFET integrated circuit development SAND980765 DE98 004795
マイクロ規格・テクニカルリポート類
Baca, A. G, Hietala, V. M, Greenway, D, Sloan, L. R, Shul, R. J1998<LS-DE98/004795>
国立国会図書館

Survey of ohmic contacts to III-V compound semiconductors SAND-97-0720C DE97 004026 CONF-9704881

Survey of ohmic contacts to III-V compound semiconductors SAND-97-0720C DE97 004026 CONF-9704881
マイクロ規格・テクニカルリポート類
Baca, A. G, Zolper, J. C, Briggs, R. D, Ren, F, Pearton, S. J1997<LS-DE97/004026>
国立国会図書館

Ion implantation for high performance III-V JFETS and HFETS SAND-96-1118C DE96 010992 CONF-96040133

Ion implantation for high performance III-V JFETS and HFETS SAND-96-1118C DE96 010992 CONF-96040133
マイクロ規格・テクニカルリポート類
Zolper, J. C, Baca, A. G, Sherwin, M. E, Klem, J. F1996<LS-DE96/010992>
国立国会図書館

Ion implantation in compound semiconductors for high-performance electronic devices SAND-96-0802C DE96 008169 CONF-9605026

Ion implantation in compound semiconductors for high-performance electronic devices SAND-96-0802C DE96 008169 CONF-9605026
マイクロ規格・テクニカルリポート類
Zolper, J. C, Baca, A. G, Sherwin, M. E, Klem, J. F1996<LS-DE96/008169>
国立国会図書館

0.5 micrometer E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant SAND-97-0384C DE97 003209 CONF-9705174

0.5 micrometer E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant SAND-97-0384C DE97 003209 CONF-9705174
マイクロ規格・テクニカルリポート類
Baca, A. G, Sherwin, M. E, Zolper, J. C, Shul, R. J, Briggs, R. D1997<LS-DE97/003209>
国立国会図書館

ECR etching of GaP, GaAs, InP, and InGaAs in Cl(sub 2)/Ar, Cl(sub 2)/N(sub 2), BCl(sub 3)/Ar, and BCl(sub 3)/N(sub 2) SAND-96-1143C DE96 010521 CONF-96040139

ECR etching of GaP, GaAs, InP, and InGaAs in Cl(sub 2)/Ar, Cl(sub 2)/N(sub 2), BCl(sub 3)/Ar, and BCl(sub 3)/N(sub 2) SAND-96-1143C DE96 010521 CONF-96040139
マイクロ規格・テクニカルリポート類
Shul, R. J, Baca, A. G, Rieger, D. J, Hou, H, Pearton, S. J1996<LS-DE96/010521>
国立国会図書館

Gallium nitride junction field effect transistors for high-temperature operation SAND-96-1417C DE96 011825 CONF-96061595

Gallium nitride junction field effect transistors for high-temperature operation SAND-96-1417C DE96 011825 CONF-96061595
マイクロ規格・テクニカルリポート類
Zolper, J. C, Shul, R. J, Baca, A. G, Hietala, V. M, Pearton, S. J1996<LS-DE96/011825>
国立国会図書館

Ion implantation processing for high-speed GaAs JFETs SAND-95-0084C DE95 013834 CONF-95051811

Ion implantation processing for high-speed GaAs JFETs SAND-95-0084C DE95 013834 CONF-95051811
マイクロ規格・テクニカルリポート類
Zolper, J. C, Baca, A. G, Sherwin, M. E, Shul, R. J1995<LS-DE95/013834>
国立国会図書館

Non-destructive inter-level dielectric via in-line process monitoring by atomic force microscopy SAND-94-2823C DE95 008516 CONF-95051891

Non-destructive inter-level dielectric via in-line process monitoring by atomic force microscopy SAND-94-2823C DE95 008516 CONF-95051891
マイクロ規格・テクニカルリポート類
Howard, A. J, Baca, A. G, Shul, R. J1994<LS-DE95/008516>
国立国会図書館

Dry etch development of W/WSi short Gate MESFETs SAND-96-0076C DE96 004704 SAND-96-0781C CONF-9605022

Dry etch development of W/WSi short Gate MESFETs SAND-96-0076C DE96 004704 SAND-96-0781C CONF-9605022
マイクロ規格・テクニカルリポート類
Shul, R. J, Sherwin, M. E, Baca, A. G, Zolper, J. C, Rieger, D. J1996<LS-DE96/004704>
国立国会図書館

Comparison of GaAs JFETs to MESFETs for high-temperature operation SAND-96-1418C DE96 011822 CONF-96061596

Comparison of GaAs JFETs to MESFETs for high-temperature operation SAND-96-1418C DE96 011822 CONF-96061596
マイクロ規格・テクニカルリポート類
Zolper, J. C, Hietala, V. M, Housel, M. S, Baca, A. G, Sherwin, M. E1996<LS-DE96/011822>
国立国会図書館

III-Nitride ion implantation and device processing SAND-96-1407C DE96 011840 CONF-96050216

III-Nitride ion implantation and device processing SAND-96-1407C DE96 011840 CONF-96050216
マイクロ規格・テクニカルリポート類
Zolper, J. C, Shul, R. J, Baca, A. G, Pearton, S. J, Abernathy, C. R1996<LS-DE96/011840>
国立国会図書館

Complementary HFET technology for low-power mixed-mode applications SAND-96-1174C DE96 010523 CONF-96040140

Complementary HFET technology for low-power mixed-mode applications SAND-96-1174C DE96 010523 CONF-96040140
マイクロ規格・テクニカルリポート類
Baca, A. G, Sherwin, M. E, Zolper, J. C, Dubbert, D. F, Hietala, V. M1996<LS-DE96/010523>
国立国会図書館

ICP etching of GaAs via hole contacts SAND-96-1901C DE96 013184 CONF-9610401

ICP etching of GaAs via hole contacts SAND-96-1901C DE96 013184 CONF-9610401
マイクロ規格・テクニカルリポート類
Shul, R. J, Baca, A. G, Briggs, R. D, McClellan, G. B, Pearton, S. J1996<LS-DE96/013184>
国立国会図書館
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