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Selective, deep Si trench etching with dimensional control SAND980490C DE98 006147 CONF980918

Selective, deep Si trench etching with dimensional control SAND980490C DE98 006147 CONF980918
マイクロ規格・テクニカルリポート類
Shul, R. J, Willison, C. G, Zhang, L1998<LS-DE98/006147>
国立国会図書館

GaN Device Processing SAND-98-0132C DE98 002578

GaN Device Processing SAND-98-0132C DE98 002578
マイクロ規格・テクニカルリポート類
Pearton, S. J, Ren, F, Zolper, J. C, Shul, R. J1998<LS-DE98/002578>
国立国会図書館

Ultra-low power microwave CHFET integrated circuit development SAND980765 DE98 004795

Ultra-low power microwave CHFET integrated circuit development SAND980765 DE98 004795
マイクロ規格・テクニカルリポート類
Baca, A. G, Hietala, V. M, Greenway, D, Sloan, L. R, Shul, R. J1998<LS-DE98/004795>
国立国会図書館

Integration of surface micromachined devices with optoelectronics: Technology and applications SAND980913C DE98 004951 CONF980720

Integration of surface micromachined devices with optoelectronics: Technology and applications SAND980913C DE98 004951 CONF980720
マイクロ規格・テクニカルリポート類
Warren, M. E, Blum, O, Sullivan, C. T, Shul, R. J, Rodgers, M. S1998<LS-DE98/004951>
国立国会図書館

Processing challenges for GaN-based photonic and electronic devices SAND-97-2236C DE97 009352 CONF-97030223

Processing challenges for GaN-based photonic and electronic devices SAND-97-2236C DE97 009352 CONF-97030223
マイクロ規格・テクニカルリポート類
Pearton, S. J, Ren, F, Shul, R. J1997<LS-DE97/009352>
国立国会図書館

Device processing of wide bandgap semiconductors - challenges and directions SAND-97-2351C DE98 000042 CONF-97051711

Device processing of wide bandgap semiconductors - challenges and directions SAND-97-2351C DE98 000042 CONF-97051711
マイクロ規格・テクニカルリポート類
Pearton, S. J, Shul, R. J, Zolper, J. C1997<LS-DE98/000042>
国立国会図書館

GaN etching in BCl(sub 3)Cl(sub 2) plasmas SAND981131C DE98 005455

GaN etching in BCl(sub 3)Cl(sub 2) plasmas SAND981131C DE98 005455
マイクロ規格・テクニカルリポート類
Shul, R. J, Ashby, C. I. H, Willison, C. G, Zhang, L, Han, J1998<LS-DE98/005455>
国立国会図書館

Deep high-aspect ratio Si etching for advanced packaging technologies SAND980608C DE98 003344

Deep high-aspect ratio Si etching for advanced packaging technologies SAND980608C DE98 003344
マイクロ規格・テクニカルリポート類
Shul, R. J, Willison, C. G, Sullivan, C. T, Kravitz, S. H, Zhang, L1998<LS-DE98/003344>
国立国会図書館

GaAs-based JFET and PHEMT technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz SAND980624C DE98 003345

GaAs-based JFET and PHEMT technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz SAND980624C DE98 003345
マイクロ規格・テクニカルリポート類
Baca, A. G, Hietala, V. M, Greenway, D, Shul, R. J, Hafich, M. J1998<LS-DE98/003345>
国立国会図書館

Microfabrication of membrane-based devices by HARSE and combined HARSE/wet etching SAND981777C DE98 007249 CONF980918

Microfabrication of membrane-based devices by HARSE and combined HARSE/wet etching SAND981777C DE98 007249 CONF980918
マイクロ規格・テクニカルリポート類
Manginell, R. P, Frye-Mason, G. C, Schubert, W. K, Shul, R. J, Willison, C. G1998<LS-DE98/007249>
国立国会図書館

0.5 micrometer E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant SAND-97-0384C DE97 003209 CONF-9705174

0.5 micrometer E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant SAND-97-0384C DE97 003209 CONF-9705174
マイクロ規格・テクニカルリポート類
Baca, A. G, Sherwin, M. E, Zolper, J. C, Shul, R. J, Briggs, R. D1997<LS-DE97/003209>
国立国会図書館

ICP etching of GaAs via hole contacts SAND-96-1901C DE96 013184 CONF-9610401

ICP etching of GaAs via hole contacts SAND-96-1901C DE96 013184 CONF-9610401
マイクロ規格・テクニカルリポート類
Shul, R. J, Baca, A. G, Briggs, R. D, McClellan, G. B, Pearton, S. J1996<LS-DE96/013184>
国立国会図書館

In-situ monitoring of etch by-products during reactive ion beam etching of GaAs in chlorine/argon SAND980223C DE98 002588

In-situ monitoring of etch by-products during reactive ion beam etching of GaAs in chlorine/argon SAND980223C DE98 002588
マイクロ規格・テクニカルリポート類
Lee, J. W, Pearton, S. J, Abernathy, C. R, Vawter, G. A, Shul, R. J1997<LS-DE98/002588>
国立国会図書館

Patterning of GaN in high-density Cl2 - and BCl3 - based plasmas SAND-97-1038C DE97 005366 CONF-9703025

Patterning of GaN in high-density Cl2 - and BCl3 - based plasmas SAND-97-1038C DE97 005366 CONF-9703025
マイクロ規格・テクニカルリポート類
Shul, R. J, Briggs, R. D, Han, J, Pearton, S. J, Lee, J. W1997<LS-DE97/005366>
国立国会図書館

Selective Etching of Wide Bandgap Nitrides SAND980257C DE98 002674

Selective Etching of Wide Bandgap Nitrides SAND980257C DE98 002674
マイクロ規格・テクニカルリポート類
Shul, R. J, Willison, C. G, Bridges, M. M, Han, J, Lee, J. W1997<LS-DE98/002674>
国立国会図書館

Comparison of dry-etch techniques for GaN, InN, and AlN SAND980335C DE98 003054

Comparison of dry-etch techniques for GaN, InN, and AlN SAND980335C DE98 003054
マイクロ規格・テクニカルリポート類
Shul, R. J, Vawter, G. A, Willison, C. G, Bridges, M. M, Lee, J. W1997<LS-DE98/003054>
国立国会図書館

ECR etching of GaP, GaAs, InP, and InGaAs in Cl(sub 2)/Ar, Cl(sub 2)/N(sub 2), BCl(sub 3)/Ar, and BCl(sub 3)/N(sub 2) SAND-96-1143C DE96 010521 CONF-96040139

ECR etching of GaP, GaAs, InP, and InGaAs in Cl(sub 2)/Ar, Cl(sub 2)/N(sub 2), BCl(sub 3)/Ar, and BCl(sub 3)/N(sub 2) SAND-96-1143C DE96 010521 CONF-96040139
マイクロ規格・テクニカルリポート類
Shul, R. J, Baca, A. G, Rieger, D. J, Hou, H, Pearton, S. J1996<LS-DE96/010521>
国立国会図書館

Plasma-induced-damage of GaN SAND-96-2022C DE96 014840 CONF-9610405

Plasma-induced-damage of GaN SAND-96-2022C DE96 014840 CONF-9610405
マイクロ規格・テクニカルリポート類
Shul, R. J, Zolper, J. C, Crawford, M. H1996<LS-DE96/014840>
国立国会図書館

ECR, ICP, and RIE plasma etching of GaN SAND-96-1139C DE96 010562 CONF-96050213

ECR, ICP, and RIE plasma etching of GaN SAND-96-1139C DE96 010562 CONF-96050213
マイクロ規格・テクニカルリポート類
Shul, R. J, McClellan, G. B, Rieger, D. J, Hafich, M. J1996<LS-DE96/010562>
国立国会図書館

Ion-implanted GaAs JFETs with f(sub t) (gt) 45 GHz for low-power electronics SAND-96-2493C DE97 000743 CONF-9611271

Ion-implanted GaAs JFETs with f(sub t) (gt) 45 GHz for low-power electronics SAND-96-2493C DE97 000743 CONF-9611271
マイクロ規格・テクニカルリポート類
Zolper, J. C, Baca, A. G, Hietala, V. M, Shul, R. J, Sherwin, M. E1996<LS-DE97/000743>
国立国会図書館
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