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Gallium nitride processing for electronics, sensors and spintronics / Stephen J. Pearton, Cammy R. Abernathy and Fan Ren. (Engineering materials and processes)

Gallium nitride processing for electronics, sensors and spintronics / Stephen J. Pearton, Cammy R. Abernathy and Fan Ren. (Engineering materials and processes)
Paper図書
Springerc2006.<MC151-B9>
National Diet Library
  • Author HeadingPearton, S. J. Abernathy, C. R. Ren, Fan.

Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A. : symposium E, "fundamentals of novel/oxide semiconductor interfaces" : 2003 MRS fall meeting : Dec 2003, Boston, MA. (Materials Research Society Symposia Proceedings ; 786)

Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A. : symposium E, "fundamentals of novel/oxide semiconductor interfaces" : 2003 MRS fall meeting : Dec 2003, Boston, MA. (Materials Research Society Symposia Proceedings ; 786)
Paper図書
Materials Research Societyc2004.<M17-04-2518>
National Diet Library
  • Author HeadingAbernathy, C. R. Materials Research Society. M...

High temperature stable WSi(sub x) ohmic contacts on GaN SAND980661C DE98 004236 CONF980622

High temperature stable WSi(sub x) ohmic contacts on GaN SAND980661C DE98 004236 CONF980622
Microform規格・テクニカルリポート類
Pearton, S. J, Donovan, S. M, Abernathy, C. R, Ren, F, Zolper, J. C1998<LS-DE98/004236>
National Diet Library

Ultra-high implant activation efficiency in GaN using novel high temperature RTP system SAND980950C DE98 004759

Ultra-high implant activation efficiency in GaN using novel high temperature RTP system SAND980950C DE98 004759
Microform規格・テクニカルリポート類
Cao, X. A, Abernathy, C. R, Singh, R. K1998<LS-DE98/004759>
National Diet Library

Dielectrics for GaN based MIS-diodes SAND980524C DE98 004137

Dielectrics for GaN based MIS-diodes SAND980524C DE98 004137
Microform規格・テクニカルリポート類
Ren, F, Abernathy, C. R, MacKenzie, J. D1998<LS-DE98/004137>
National Diet Library

Current transport in W and WSI(sub x) ohmic contacts to InGaN and InN SAND-97-2350C DE98 000043 CONF-97030224

Current transport in W and WSI(sub x) ohmic contacts to InGaN and InN SAND-97-2350C DE98 000043 CONF-97030224
Microform規格・テクニカルリポート類
Vartuli, C. B, Pearton, S. J, Abernathy, C. R1997<LS-DE98/000043>
National Diet Library

High temperature stable W and WSi(sub x) ohmic contacts on GaN and InGaN SAND-96-1386C DE96 011849 CONF-96061594

High temperature stable W and WSi(sub x) ohmic contacts on GaN and InGaN SAND-96-1386C DE96 011849 CONF-96061594
Microform規格・テクニカルリポート類
Pearton, S. J, Abernathy, C. R, Durbha, A1996<LS-DE96/011849>
National Diet Library

Cl(sub 2)-based dry etching of the AlGaInN system in inductively coupled plasmas SAND-98-0224C DE98 002589

Cl(sub 2)-based dry etching of the AlGaInN system in inductively coupled plasmas SAND-98-0224C DE98 002589
Microform規格・テクニカルリポート類
Cho, H, Vartuli, C. B, Abernathy, C. R, Conovan, S. M, Pearton, S. J1997<LS-DE98/002589>
National Diet Library

Plasma etching of the Group-III nitrides SAND-96-0005C DE96 004578 CONF-9605023

Plasma etching of the Group-III nitrides SAND-96-0005C DE96 004578 CONF-9605023
Microform規格・テクニカルリポート類
Shul, R, Pearton, S. J, Abernathy, C. R1996<LS-DE96/004578>
National Diet Library

In-situ monitoring of etch by-products during reactive ion beam etching of GaAs in chlorine/argon SAND980223C DE98 002588

In-situ monitoring of etch by-products during reactive ion beam etching of GaAs in chlorine/argon SAND980223C DE98 002588
Microform規格・テクニカルリポート類
Lee, J. W, Pearton, S. J, Abernathy, C. R, Vawter, G. A, Shul, R. J1997<LS-DE98/002588>
National Diet Library

Properties of H, O and C in GaN SAND-96-0846C DE96 008876 CONF-9604011

Properties of H, O and C in GaN SAND-96-0846C DE96 008876 CONF-9604011
Microform規格・テクニカルリポート類
Pearton, S. J, Abernathy, C. R, Lee, J. W1996<LS-DE96/008876>
National Diet Library

Hydrogen incorporation into III-V nitrides during processing SAND-95-2102C DE96 000783 CONF-9510073

Hydrogen incorporation into III-V nitrides during processing SAND-95-2102C DE96 000783 CONF-9510073
Microform規格・テクニカルリポート類
Pearton, S. J, Abernathy, C. R, Vartuli, C. B1995<LS-DE96/000783>
National Diet Library

High microwave power ECR etching of III-V semiconductors in CH4/H2/Ar SAND-96-0693C DE96 007053 CONF-9605024

High microwave power ECR etching of III-V semiconductors in CH4/H2/Ar SAND-96-0693C DE96 007053 CONF-9605024
Microform規格・テクニカルリポート類
Lee, J. W, Pearton, S. J, Lambers, E. S, Mileham, J. R, Abernathy, C. R1996<LS-DE96/007053>
National Diet Library

Status of ion implantation doping and isolation of III-V nitrides SAND-95-0949C DE95 017888 CONF-9510075

Status of ion implantation doping and isolation of III-V nitrides SAND-95-0949C DE95 017888 CONF-9510075
Microform規格・テクニカルリポート類
Zolper, J. C, Pearton, S. J, Abernathy, C. R1995<LS-DE95/017888>
National Diet Library

Doping and isolation of GaN, InGaN and InAlN using ion implantation SAND-95-1750C DE95 016409 CONF-9509821

Doping and isolation of GaN, InGaN and InAlN using ion implantation SAND-95-1750C DE95 016409 CONF-9509821
Microform規格・テクニカルリポート類
Pearton, S. J, Vartuli, C. B, Abernathy, C. R1995<LS-DE95/016409>
National Diet Library

Novel compound semiconductor devices based on III-V nitrides SAND-95-2180C DE96 000708 CONF-9512431

Novel compound semiconductor devices based on III-V nitrides SAND-95-2180C DE96 000708 CONF-9512431
Microform規格・テクニカルリポート類
Pearton, S. J, Abernathy, C. R, Ren, F1995<LS-DE96/000708>
National Diet Library

High temperature surface degradation of III-V nitrides SAND-96-1054C DE96 010845 CONF-96040127

High temperature surface degradation of III-V nitrides SAND-96-1054C DE96 010845 CONF-96040127
Microform規格・テクニカルリポート類
Vartuli, C. B, Pearton, S. J, Abernathy, C. R, MacKenzie, J. D, Lambers, E. S1996<LS-DE96/010845>
National Diet Library

III-Nitride ion implantation and device processing SAND-96-1407C DE96 011840 CONF-96050216

III-Nitride ion implantation and device processing SAND-96-1407C DE96 011840 CONF-96050216
Microform規格・テクニカルリポート類
Zolper, J. C, Shul, R. J, Baca, A. G, Pearton, S. J, Abernathy, C. R1996<LS-DE96/011840>
National Diet Library

High resistivity InAlN by nitrogen or oxygen implantation SAND-94-2795C DE95 011023 CONF-9504125

High resistivity InAlN by nitrogen or oxygen implantation SAND-94-2795C DE95 011023 CONF-9504125
Microform規格・テクニカルリポート類
Zolper, J. C, Pearton, S. J, Abernathy, C. R, Vartuli, C. B1995<LS-DE95/011023>
National Diet Library

Fabrication of novel III-N and III-V modulator structures by ECR plasma etching SAND-95-2708C DE96 003071 CONF-95115511

Fabrication of novel III-N and III-V modulator structures by ECR plasma etching SAND-95-2708C DE96 003071 CONF-95115511
Microform規格・テクニカルリポート類
Pearton, S. J, Abernathy, C. R, MacKenzie, J. D1995<LS-DE96/003071>
National Diet Library
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