山田正良, 京都工芸繊維大学 [著][山田正良]2001-2003<Y151-H13555004>
National Diet Library
山田, 正良, 京都工芸繊維大学1998-2001<Y151-H10450008>
National Diet Library
山田, 正良, 京都工芸繊維大学1993-1995<Y151-H05555004>
National Diet Library
山田, 正良, 京都工芸繊維大学1989-1990<Y151-H01550015>
National Diet Library
研究代表者山田正良[山田正良]2004.3
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山田, 正良, 京都工芸繊維大学1986-1987<Y151-S61550016>
National Diet Library
研究代表者山田正良[山田正良]2002
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山田, 正良, 神戸大学1984-1985<Y151-S59550013>
National Diet Library
Verma, P., Islam, M. R., 山田, 正良, 龍見, 雅美, 木下, 恭一, Yamada, Masayoshi, Tatsumi, Masami, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.85-89
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Islam, M. R., Verma, P., 山田, 正良, 児玉, 茂夫, 花上, 康宏, 木下, 恭一, Yamada, Masayoshi, Kodama, Shigeo, Hanaue, Yasuhiro, Kinoshita, Kyoichi宇宙開発事業団2002-12-27宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystalsp.61-71
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Islam, M. R., 鈴木, 将, Verma, P., 山田, 正良, 龍見, 雅美, 花上, 康宏, 木下, 恭一, Suzuki, Masaru, Yamada, Masayoshi, Tatsumi, Masami, Hanaue, Yasuhiro, Kinoshita, Kyoichi宇宙開発事業団2002-12-27宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystalsp.73-79
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Verma, P., 山田, 正良, 龍見, 雅美, 加藤, 浩和, 木下, 恭一, Yamada, Masayoshi, Tatsumi, Masami, Kato, Hirokazu, Kinoshita, Kyoichi宇宙開発事業団2000-09-29NASDA Technical Memorandump.77-81
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研究代表者山田正良[山田正良]1996.3
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研究代表者山田正良[山田正良]1991
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山田正良 [著]<UT51-48-E400>
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研究代表者山田正良[山田正良]1988
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日本工業出版1957-<Z16-401>
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京都工芸繊維大学創造連携センター 編京都工芸繊維大学創造連携センター2007-2009<Z74-F628>
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電子情報通信学会 編電子情報通信学会エレクトロニクスソサイエティ2000-2014<Z16-607>
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京都工芸繊維大学地域共同研究センター [編]京都工芸繊維大学地域共同研究センター1992-2002<Z17-B17>
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