「"Muramatsu, Yuji"」の検索結果 | NDLサーチ

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High quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates

デジタル規格・テクニカルリポート類

木下, 恭一, 植田, 稔晃, 足立, 聡, 荒井, 康智, 宮田, 浩旭, 田中, 涼太, 村松, 祐治, 依田, 眞一, Kinoshita, Kyoichi, Ueda, Toshiaki, Adachi, Satoshi, Arai, Yasutomo, Miyata, Hiroaki, Tanaka, Ryota, Muramatsu, Yuji, Yoda, Shinichi宇宙航空研究開発機構2007-03-30宇宙航空研究開発機構研究開発報告 = JAXA Research and Development ReportJAXA-RR-06-014E

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著者標目... Tanaka, Ryota Muramatsu, Yuji Yoda, Shinichi

Investigation on polycrystallization mechanism at initial interfaces in In(x)Ga(1-x)As (x is approximately 0.3) bulk crystals on lattice mismatched seeds

デジタル規格・テクニカルリポート類

宮田, 浩旭, 緒方, 康行, 足立, 聡, 鶴, 哲也, 村松, 祐治, 木下, 恭一, 小田原, 修, 依田, 眞一, Miyata, Hiroaki, Ogata, Yasuyuki, Adachi, Satoshi, Tsuru, Tetsuya, Muramatsu, Yuji, Kinoshita, Kyoichi, Odawara, Osamu, Yoda, Shinichi宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-SP-05-036Ep.13-20

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著者標目...Tsuru, Tetsuya Muramatsu, Yuji Kinoshita, Kyoichi Odawara, O...

Scaling up of TLZ-grown platy In(0.3)Ga(0.7)As crystals for semiconductor laser substrates

デジタル規格・テクニカルリポート類

木下, 恭一, 緒方, 康行, 足立, 聡, 鶴, 哲也, 宮田, 浩旭, 村松, 祐治, 依田, 眞一, Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Yoda, Shinichi宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-SP-05-036Ep.7-12

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著者標目...iyata, Hiroaki Muramatsu, Yuji Yoda, Shinichi

Growth of In(0.1)Ga(0.9)As single crystal plates and fabrication of In(x)Ga(1-x)As/In(0.1)Ga(0.9)As-Starained Quantum Wells (SQW)

デジタル規格・テクニカルリポート類

鶴, 哲也, 宮田, 浩旭, 村松, 祐治, 緒方, 康行, 木下, 恭一, 足立, 聡, 依田, 眞一, 荒井, 昌和, 渡辺, 孝夫, 近藤, 康洋, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Ogata, Yasuyuki, Kinoshita, Kyoichi, Adachi, Satoshi, Yoda, Shinichi, Arai, Masakazu, Watanabe, Takao, Kondo, Yasuhiro宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-SP-05-036Ep.1-6

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著者標目...iyata, Hiroaki Muramatsu, Yuji Ogata, Yasuyuki Kinoshita, Ky...

Detailed results of this period: Growth of homogeneous Si(0.5)Ge(0.5) single crystals by the Traveling Liquidus-Zone Method

デジタル規格・テクニカルリポート類

宮田, 浩旭, 緒方, 康行, 木下, 恭一, 足立, 聡, 依田, 真一, 鶴, 哲也, 村松, 祐治, Miyata, Hiroaki, Ogata, Yasuyuki, Kinoshita, Kyoichi, Adachi, Satoshi, Yoda, Shinichi, Tsuru, Tetsuya, Muramatsu, Yuji宇宙航空研究開発機構2005-03-31宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-RR-04-022Ep.7-13

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著者標目...Tsuru, Tetsuya Muramatsu, Yuji

In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method

デジタル規格・テクニカルリポート類

木下, 恭一, 緒方, 康行, 足立, 聡, 越川, 尚清, 鶴, 哲也, 宮田, 浩旭, 村松, 祐治, 依田, 真一, Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Koshikawa, Naokiyo, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Yoda, Shinichi宇宙航空研究開発機構2005-03-31宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-RR-04-022Ep.14-20

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著者標目...iyata, Hiroaki Muramatsu, Yuji Yoda, Shinichi

Verification of homogeneous In(x)Ga(1-x)As crystal growth by the TLZ (Traveling Liquidus-Zone) method

デジタル規格・テクニカルリポート類

鶴, 哲也, 岩井, 正行, 村松, 祐治, 木下, 恭一, 緒方, 康行, 足立, 聡, 越川, 尚清, 依田, 真一, Tsuru, Tetsuya, Iwai, Masayuki, Muramatsu, Yuji, Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Koshikawa, Naokiyo, Yoda, Shinichi宇宙開発事業団2003-08-29宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.11-18

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著者標目Tsuru, Tetsuya Iwai, Masayuki Muramatsu, Yuji Kinoshita, Kyoichi Ogata, Yas...

Modeling and experimental study on the traveling liquidus-zone method

デジタル規格・テクニカルリポート類

木下, 恭一, 中村, 裕彦, 花上, 康宏, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 足立, 聡, 越川, 尚清, 依田, 真一, Kinoshita, Kyoichi, Nakamura, Hirohiko, Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Adachi, Satoshi, Koshikawa, Naokiyo, Yoda, Shinichi宇宙開発事業団2002-12-27宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystalsp.11-18

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著者標目...Tsuru, Tetsuya Muramatsu, Yuji Adachi, Satoshi Koshikawa, Na...

Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method

デジタル規格・テクニカルリポート類

花上, 康宏, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 木下, 恭一, Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.13-17

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著者標目Hanaue, Yasuhiro Iwai, Masayuki Tsuru, Tetsuya Muramatsu, Yuji Kinoshita, Kyoichi

Constitutional supercooling in the crystal growth of In(x)Ga(1-x)As

デジタル規格・テクニカルリポート類

木下, 恭一, 緒方, 康行, 越川, 尚清, 足立, 聡, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 杉木, 喜洋, 前川, 透, 依田, 真一, Kinoshita, Kyoichi, Ogata, Yasuyuki, Koshikawa, Naokiyo, Adachi, Satoshi, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Sugiki, Yoshihiro, Maekawa, Toru, Yoda, Shinichi宇宙開発事業団2003-08-29宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.19-26

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著者標目...Tsuru, Tetsuya Muramatsu, Yuji Sugiki, Yoshihiro Maekawa, To...

Homogeneous In(0.3)Ga(0.7)As crystal growth by the graded solute concentration method

デジタル規格・テクニカルリポート類

木下, 恭一, 加藤, 浩和, 松本, 聡, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 依田, 真一, Kinoshita, Kyoichi, Kato, Hirokazu, Matsumoto, Satoshi, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Yoda, Shinichi宇宙開発事業団2000-09-29NASDA Technical Memorandump.11-14

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著者標目...Tsuru, Tetsuya Muramatsu, Yuji Yoda, Shinichi

粒子分散合金の溶融･凝固

デジタル規格・テクニカルリポート類

村松, 祐治, 檀, 武弘, Muramatsu, Yuji, Dan, Takehiro宇宙開発事業団1994-10-20宇宙開発事業団技術報告 = NASDA Technical Memorandump.552-569

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著者標目Muramatsu, Yuji Dan, Takehiro

2種の溶融金属の相互拡散および凝固生成する合金、化合物の組織と構造

デジタル規格・テクニカルリポート類

檀, 武弘, 村松, 祐治, 山縣, 敏博, 星本, 健一, 木村, 隆, Dan, Takehiro, Muramatsu, Yuji, Yamagata, Toshihiro, Hoshimoto, Kenichi, Kimura, Takashi宇宙開発事業団1994-10-20宇宙開発事業団技術報告 = NASDA Technical Memorandump.570-594

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